? 2006 ixys all rights reserved g = gate d = drain s = source tab = drain ds99390e(03/06) polarhv tm hiperfet power mosfet ixfh 18n60p ixfv 18n60p ixfv 18n60ps n-channel enhancement mode fast intrinsic diode avalanche rated features l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 2.5 ma 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 400 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gs continuous 30 v v gsm tranisent 40 v i d25 t c = 25 c18a i dm t c = 25 c, pulse width limited by t jm 45 a i ar t c = 25 c18a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 5 p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g plus220 & plus220smd 4 g g s d plus220 (ixfv) g s plus220smd (ixfv...s) d (tab) d (tab) to-247 ad (ixfh) v dss = 600 v i d25 =18 a r ds(on) 400 m t rr 200 ns d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 18n60p ixfv 18n60p ixfv 18n60ps symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 9 16 s c iss 2500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 280 pf c rss 23 pf t d(on) 21 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 22 ns t d(off) r g = 5 (external) 62 ns t f 22 ns q g(on) 50 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 15 nc q gd 18 nc r thjc 0.35 c/w r thcs (to-247, plus220) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 18 a i sm repetitive 54 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i s = 18 a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v, v gs = 0 v 0.8 c f rm 5a note 1: pulse test, t 300 s, duty cycled 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 plus220smd (ixfv_s) outline plus220 (ixfv) outline to-247 (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2006 ixys all rights reserved ixfh 18n60p ixfv 18n60p ixfv 18n60ps fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 012345678 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 024681012141618 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 9a value vs. junction temperature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 18a i d = 9a fig. 5. r ds(on) normalized to i d = 9a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 5 10 15 20 25 30 35 40 45 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 -50-25 0 25 50 75100125150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 18n60p ixfv 18n60p ixfv 18n60ps fig. 7. input admittance 0 5 10 15 20 25 30 35 40 3.5 4 4.5 5 5.5 6 6.5 7 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 4 8 12 16 20 24 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = 300v i d = 9a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc 25s 1ms 100s r ds(on) limits 10ms dc
? 2006 ixys all rights reserved ixfh 18n60p ixfv 18n60p ixfv 18n60ps fig. 13. maximum transient thermal resistance 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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